1300-nm wafer-fused VCSELs with InGaAs/InAlGaAs superlattice-based active region

Sergey A. Blokhin; Nikolay Ledentsov Jr.; Stanislav S. Rochas; Andrey V. Babichev; Andrey G. Gladyshev; Łukasz Chorchos; Oleg Yu. Makarov; Leonid Ya. Karachinsky; Innokenty I. Novikov; Alexey A. Blokhin; Mikhail A. Bobrov; Nikolay A. Maleev; Vladislav V. Andryushkin; Kirill O. Voropaev; Irina O. Zhumaeva; Victor M. Ustinov; Anton Yu. Egorov; Nikolay N. Ledentsov

doi:10.1117/12.2605451

2 March 2022 1300-nm wafer-fused VCSELs with InGaAs/InAlGaAs superlattice-based active region

Sergey A. Blokhin, Nikolay Ledentsov Jr., Stanislav S. Rochas, Andrey V. Babichev, Andrey G. Gladyshev, Łukasz Chorchos, Oleg Yu. Makarov, Leonid Ya. Karachinsky, Innokenty I. Novikov, Alexey A. Blokhin, Mikhail A. Bobrov, Nikolay A. Maleev, Vladislav V. Andryushkin, Kirill O. Voropaev, Irina O. Zhumaeva, Victor M. Ustinov, Anton Yu. Egorov, Nikolay N. Ledentsov

Author Affiliations +

Proceedings Volume 12020, Vertical-Cavity Surface-Emitting Lasers XXVI; 120200K (2022) https://doi.org/10.1117/12.2605451
Event: SPIE OPTO, 2022, San Francisco, California, United States

Abstract

The paper presents the results of the research and development of 1300-nm vertical-cavity surface-emitting lasers, fabricated by wafer fusion technique for hybrid integration of an InAlGaAs/InP optical cavity with two AlGaAs/GaAs distributed Bragg reflectors using molecular-beam epitaxy. The active region is based on InGaAs/InAlGaAs superlattice, while current and optical confinement is provided by n⁺⁺-InGaAs/p⁺⁺-InGaAs/p++-InAlGaAs buried tunnel junction (BTJ). The proposed device design results in low internal loss (about 3.2 cm^-1 at 20 °C). The devices with BTJ diameter of 5 μm demonstrate a stable single-mode lasing with threshold current less than 1.3 mA and output optical power more than 6 mW and operation in a wide temperature range. The measured -3 dB bandwidth is more than 8 GHz at 20 °C and about 5.5 GHz at 85 °C, the eye diagrams are open with a bit rate up to 20 Gbps using nonreturn-to-zero (NRZ) modulation standard. Using 5-tap feedforward equalizer, the NRZ transmission at 25 Gbps has been demonstrated up to 5km single-mode fiber.

Conference Presentation

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Sergey A. Blokhin, Nikolay Ledentsov Jr., Stanislav S. Rochas, Andrey V. Babichev, Andrey G. Gladyshev, Łukasz Chorchos, Oleg Yu. Makarov, Leonid Ya. Karachinsky, Innokenty I. Novikov, Alexey A. Blokhin, Mikhail A. Bobrov, Nikolay A. Maleev, Vladislav V. Andryushkin, Kirill O. Voropaev, Irina O. Zhumaeva, Victor M. Ustinov, Anton Yu. Egorov, and Nikolay N. Ledentsov "1300-nm wafer-fused VCSELs with InGaAs/InAlGaAs superlattice-based active region", Proc. SPIE 12020, Vertical-Cavity Surface-Emitting Lasers XXVI, 120200K (2 March 2022); https://doi.org/10.1117/12.2605451

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