Design of a hybrid SET-TFET nanoscale IC for RF and microwave frequencies

Naheem O. Adesina; Fawwaz Hazzazi; Chintan P. Chavda; Georgios Veronis; Theda Daniels-Race; Jian Xu

doi:10.1117/12.2628189

18 April 2022 Design of a hybrid SET-TFET nanoscale IC for RF and microwave frequencies

Naheem O. Adesina, Fawwaz Hazzazi, Chintan P. Chavda, Georgios Veronis, Theda Daniels-Race, Jian Xu

Proceedings Volume 12045, Nano-, Bio-, Info-Tech Sensors, and Wearable Systems 2022; 120450B (2022) https://doi.org/10.1117/12.2628189
Event: SPIE Smart Structures + Nondestructive Evaluation, 2022, Long Beach, California, United States

Abstract

Device size has now reached the nanoscale range due to advancements in technology and scaling in the fields of very large-scale integration. The single-electron transistor (SET) is a promising solid-state device that can provide an extension for Moore’s law and is suitable for next-generation nanoelectronics design and application. Due to the Coulomb oscillation properties of the SET in addition to the high gain and ultra-low power consumption of the tunnel field effect transistor (TFET), the implementation of the hybrid SET/TFET will primarily benefit high density (nanoscale), low-power integrated circuits (ICs), and fast switching devices. In this study, we present a hybrid model of a graphene-based single electron transistor [1] with an n-type double-gate graphene nanoribbon TFET structure [2] utilized as an integrator. For simplicity, the TFET is used in the shorted gate configuration by connecting both the front and back gates. Following this, we design a fourth order analog low pass filter using the integrator circuit of SET/TFET. With the implementation in SPICE and Matlab, we analyze the transfer function of our proposed filter from its frequency characteristics (Bode plot). Our findings reveal significant roll-off and, as a consequence, increased filtering functions with low power consumption. This study adds to the realization and implementation of SET/TFET into applications where high frequency contributes to the reliability, performance, and low power required for nanoscale devices and designs.

Conference Presentation

Citation Download Citation

Naheem O. Adesina, Fawwaz Hazzazi, Chintan P. Chavda, Georgios Veronis, Theda Daniels-Race, and Jian Xu "Design of a hybrid SET-TFET nanoscale IC for RF and microwave frequencies", Proc. SPIE 12045, Nano-, Bio-, Info-Tech Sensors, and Wearable Systems 2022, 120450B (18 April 2022); https://doi.org/10.1117/12.2628189

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available