In device overlay control with multiple overlay metrology in 3D-NAND process

Li-Ting Chang; Yu-Lin Liu; Chi-hao Huang; Rishabh Kushwaha; Yen Chun Chuan Sun; Cheng Hung Wu; Shao Chang Cheng; Hsiao Fei Su; Yen Hung Liu; Mars Yang; Elvis Yang; T. H. Yang; K. C. Chen

doi:10.1117/12.2613193

26 May 2022 In device overlay control with multiple overlay metrology in 3D-NAND process

Li-Ting Chang, Yu-Lin Liu, Chi-hao Huang, Rishabh Kushwaha, Yen Chun Chuan Sun, Cheng Hung Wu, Shao Chang Cheng, Hsiao Fei Su, Yen Hung Liu, Mars Yang, Elvis Yang, T. H. Yang, K. C. Chen

Author Affiliations +

Proceedings Volume 12053, Metrology, Inspection, and Process Control XXXVI; 120531P (2022) https://doi.org/10.1117/12.2613193
Event: SPIE Advanced Lithography + Patterning, 2022, San Jose, California, United States

Conference Poster

Abstract

As device dimensions continuously shrink in semiconductor manufacturing, even tighter overlay control is indispensable to secure good device yield. Using traditional optical overlay metrology via scribe-lane marks it is challenging to achieve good intra-field high-order process correction (iHOPC) due to the limited mark count and uneven mark distribution. Also the scribe-lane based metrology may not fully represent the in-device behavior in some cases. In order to achieve improved accuracy and precision of in-device overlay control, new metrology methodology solution is required. In this paper, three complementary overlay metrology techniques – high voltage scanning electron microscope (HV-SEM), optical scatterometry critical dimension measurement (SCD), and traditional scribe-lane based optical overlay metrology – were adopted for in-device overlay improvement. In 3D NAND device production, in-device overlay measurement is getting more challenging due to the thicker or complex film stack. Though both HV-SEM and SCD are able to measure in-device patterns via capturing buried structures, their different tool principles make them suitable in different situations. Through applying non-zero offset (NZO) overlay compensation at photo exposure, the in-device overlay performance can be enhanced by iHOPC, which is enabled by incorporating high-density in-device sampling measurements from HV-SEM and SCD into traditional optical scribe-lane optical overlay measurements. The improved overlay performance was demonstrated for different process layers in this study.

Conference Presentation

Citation Download Citation

Li-Ting Chang, Yu-Lin Liu, Chi-hao Huang, Rishabh Kushwaha, Yen Chun Chuan Sun, Cheng Hung Wu, Shao Chang Cheng, Hsiao Fei Su, Yen Hung Liu, Mars Yang, Elvis Yang, T. H. Yang, and K. C. Chen "In device overlay control with multiple overlay metrology in 3D-NAND process", Proc. SPIE 12053, Metrology, Inspection, and Process Control XXXVI, 120531P (26 May 2022); https://doi.org/10.1117/12.2613193

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