Outlook for high-NA EUV patterning: a holistic patterning approach to address upcoming challenges

Angélique Raley; Lior Huli; Steven Grzeskowiak; Katie Lutker-Lee; Alexandra Krawicz; Yannick Feurprier; Eric Liu; Kanzo Kato; Kathleen Nafus; Arnaud Dauendorffer; Nayoung Bae; Josh LaRose; Andrew Metz; Dave Hetzer; Masanobu Honda; Tetsuya Nishizuka; Akiteru Ko; Soichiro Okada; Yasuyuki Ido; Tomoya Onitsuka; Shinichiro Kawakami; Seiji Fujimoto; Satoru Shimura; Cong Que Dinh; Makoto Muramatsu; Peter Biolsi; Hiromasa Mochiki; Seiji Nagahara

doi:10.1117/12.2613063

25 May 2022 Outlook for high-NA EUV patterning: a holistic patterning approach to address upcoming challenges

Angélique Raley, Lior Huli, Steven Grzeskowiak, Katie Lutker-Lee, Alexandra Krawicz, Yannick Feurprier, Eric Liu, Kanzo Kato, Kathleen Nafus, Arnaud Dauendorffer, Nayoung Bae, Josh LaRose, Andrew Metz, Dave Hetzer, Masanobu Honda, Tetsuya Nishizuka, Akiteru Ko, Soichiro Okada, Yasuyuki Ido, Tomoya Onitsuka, Shinichiro Kawakami, Seiji Fujimoto, Satoru Shimura, Cong Que Dinh, Makoto Muramatsu, Peter Biolsi, Hiromasa Mochiki, Seiji Nagahara

Author Affiliations +

Proceedings Volume 12056, Advanced Etch Technology and Process Integration for Nanopatterning XI; 120560A (2022) https://doi.org/10.1117/12.2613063
Event: SPIE Advanced Lithography + Patterning, 2022, San Jose, California, United States

Abstract

In this talk we present core technology solutions for EUV Patterning and co-optimization between EUV resist and underlayer coating, development and plasma etch transfer to achieve best in class patterning performance. We will introduce new hardware and process innovations to address EUV stochastic issues, and present strategies that can extend into High NA EUV patterning. A strong focus will be placed on dose reduction opportunities, thin resist enablement and resist pattern collapse mitigation technologies. CAR and MOR performance for leading edge design rules will be showcased. As the first High NA EUV scanner is scheduled to be operational in 2023 in the joint high NA lab in Veldhoven, Tokyo Electron will collaborate closely with imec, ASML and our materials partners to accelerate High NA learning and support EUV roadmap extension.

Conference Presentation

Citation Download Citation

Angélique Raley, Lior Huli, Steven Grzeskowiak, Katie Lutker-Lee, Alexandra Krawicz, Yannick Feurprier, Eric Liu, Kanzo Kato, Kathleen Nafus, Arnaud Dauendorffer, Nayoung Bae, Josh LaRose, Andrew Metz, Dave Hetzer, Masanobu Honda, Tetsuya Nishizuka, Akiteru Ko, Soichiro Okada, Yasuyuki Ido, Tomoya Onitsuka, Shinichiro Kawakami, Seiji Fujimoto, Satoru Shimura, Cong Que Dinh, Makoto Muramatsu, Peter Biolsi, Hiromasa Mochiki, and Seiji Nagahara "Outlook for high-NA EUV patterning: a holistic patterning approach to address upcoming challenges", Proc. SPIE 12056, Advanced Etch Technology and Process Integration for Nanopatterning XI, 120560A (25 May 2022); https://doi.org/10.1117/12.2613063

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