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1 November 2021 Terahertz time-domain spectroscopy of wide-bandgap semiconductors GaN and β-Ga2O3
Verdad C. Agulto, Toshiyuki Iwamoto, Kazuhiro Toya, Valynn Katrine Mag-usara, Masayuki Imanishi, Ken Goto, Hisashi Murakami, Yoshinao Kumagai, Yusuke Mori, Masashi Yoshimura, Makoto Nakajima
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Proceedings Volume 12057, Twelfth International Conference on Information Optics and Photonics; 120574M (2021) https://doi.org/10.1117/12.2606988
Event: Twelfth International Conference on Information Optics and Photonics, 2021, Xi'an, China
Abstract
Wide-bandgap semiconductors are fundamental components in many optoelectronic and power devices. The free-carrier properties, i.e., carrier density and mobility, are crucial parameters that determine device performance. This paper presents the characterization of a gallium nitride (GaN) wafer with ~1016 cm-3 carrier concentration using terahertz (THz) time- domain ellipsometry. In addition, THz time-domain spectroscopy of monoclinic beta-gallium oxide (β-Ga2O3) semi- insulating bulk and n-type homoepitaxial film are presented. The free-carrier properties are extracted by theoretically fitting the complex refractive index to the Drude and Drude-Lorentz models. THz time-domain techniques are a practical and powerful tool to nondestructively characterize the free-carrier properties of wide-bandgap semiconductors for device development.
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Verdad C. Agulto, Toshiyuki Iwamoto, Kazuhiro Toya, Valynn Katrine Mag-usara, Masayuki Imanishi, Ken Goto, Hisashi Murakami, Yoshinao Kumagai, Yusuke Mori, Masashi Yoshimura, and Makoto Nakajima "Terahertz time-domain spectroscopy of wide-bandgap semiconductors GaN and β-Ga2O3", Proc. SPIE 12057, Twelfth International Conference on Information Optics and Photonics, 120574M (1 November 2021); https://doi.org/10.1117/12.2606988
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KEYWORDS
Terahertz radiation
Gallium nitride
Semiconducting wafers
Refractive index
Semiconductors
Terahertz spectroscopy
Ellipsometry
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