1 July 1990 Adsorption and decomposition of chemisorbed propylene on the Si(100)-(2×1) surface: a laser-induced thermal desorption study
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Proceedings Volume 1208, Laser Photoionization and Desorption Surface Analysis Techniques; (1990); doi: 10.1117/12.17870
Event: OE/LASE '90, 1990, Los Angeles, CA, United States
Abstract
Deuterated propylene (C3D6) chemisorption and decomposition on the Si(100)-(2x1) surface has been studied in ultrahigh vacuum by using laser induced thermal desorption (LITD) and temperature programmed desorption techniques (TPD). Propylene was found to adsorb molecularly at 110 K and to remain as an undecomposed molecular adsorbate up to approximately 500 K. As the surface temperature is increased, the propylene can both thermally desorb and decompose, ultimately producing a SiC thin film. LITD was used to study C3D6 and D2 desorption as a function of surface temperature during temperature programming. Slow heating leads to strongly enhanced C3D6 decomposition compared to fast heating by laser irradiation. The decomposition of propylene is apparently a multistep process because deuterium is released from the chemisorbed propylene (and its fragments) over a temperature range from approximately 450 to 850 K. D2 desorption from the decomposition of C3D6 occurs at higher temperatures compared to that observed for chemisorbed deuterium.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kumar Sinniah, Mike G. Sherman, John T. Yates, Kenneth C. Janda, "Adsorption and decomposition of chemisorbed propylene on the Si(100)-(2×1) surface: a laser-induced thermal desorption study", Proc. SPIE 1208, Laser Photoionization and Desorption Surface Analysis Techniques, (1 July 1990); doi: 10.1117/12.17870; https://doi.org/10.1117/12.17870
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Telescopic pixel displays

Silicon

Silicon carbide

Temperature metrology

Crystals

Chemical species

Carbon

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