Laser-induced desorption of dimethylcadmium from silicon

Vladimir N. Varakin; Anatoly M. Panesh; Alexander P. Simonov

doi:10.1117/12.17879

1 July 1990 Laser-induced desorption of dimethylcadmium from silicon

Vladimir N. Varakin, Anatoly M. Panesh, Alexander P. Simonov

Proceedings Volume 1208, Laser Photoionization and Desorption Surface Analysis Techniques; (1990) https://doi.org/10.1117/12.17879
Event: OE/LASE '90, 1990, Los Angeles, CA, United States

Abstract

A method of laser-induced desorption mass spectrometry (LIDMS) has been used to examine the dynamics of Cd(CH₃)₂ chemisorption and spontaneous decomposition on n type Si(100) with native surface oxide, the pathways and efficiencies of the adsorbate desorption due to the absorption of the XeCl. laser radiation by silicon. The extremely fast processes in the adlayer re caused by the preceding irradiation of the surface of the sample by intensive (with fluences up to 0.4 J/cm² ) laser pulses . The conet It ion between intact, dissociative, and recombination desorption pathways s responsible for the observed laser fluence dependences of the desorption of Cd(CH₃)₂ and its fragments.

Citation Download Citation

Vladimir N. Varakin, Anatoly M. Panesh, and Alexander P. Simonov "Laser-induced desorption of dimethylcadmium from silicon", Proc. SPIE 1208, Laser Photoionization and Desorption Surface Analysis Techniques, (1 July 1990); https://doi.org/10.1117/12.17879

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