1 July 1990 Laser-induced desorption of dimethylcadmium from silicon
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Proceedings Volume 1208, Laser Photoionization and Desorption Surface Analysis Techniques; (1990); doi: 10.1117/12.17879
Event: OE/LASE '90, 1990, Los Angeles, CA, United States
Abstract
A method of laser-induced desorption mass spectrometry (LIDMS) has been used to examine the dynamics of Cd(CH3)2 chemisorption and spontaneous decomposition on n type Si(100) with native surface oxide, the pathways and efficiencies of the adsorbate desorption due to the absorption of the XeCl. laser radiation by silicon. The extremely fast processes in the adlayer re caused by the preceding irradiation of the surface of the sample by intensive (with fluences up to 0.4 J/cm2 ) laser pulses . The conet It ion between intact, dissociative, and recombination desorption pathways s responsible for the observed laser fluence dependences of the desorption of Cd(CH3)2 and its fragments.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vladimir N. Varakin, Anatoly M. Panesh, Alexander P. Simonov, "Laser-induced desorption of dimethylcadmium from silicon", Proc. SPIE 1208, Laser Photoionization and Desorption Surface Analysis Techniques, (1 July 1990); doi: 10.1117/12.17879; https://doi.org/10.1117/12.17879
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KEYWORDS
Cadmium

Silicon

Ions

Semiconductor lasers

Adsorption

Pulsed laser operation

Chemisorption

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