1 July 1990 Silicon surface kinetics studied using laser-induced thermal desorption
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Abstract
Laser induced thermal desorption (LITD) has emerged as a powerful time-dependent probe of surface processes. The ability of LITD to desorb silicon-containing species from Si(l1l)7x7 has been employed to study the decomposition of H20 and NH3 on Si(l11)7x7. These LITD studies on Si(111)7x7 assumed that the silicon-containing species were derived from surface reaction intermediates. This assumption was recently tested by transmission FTIR investigations of H20 and NH3 decomposition on high surface area porous silicon surfaces. The LITD and FTIR results were compared for the thermal stability of the SiOH surface species during H2O decomposition and the SiNH2 surface species during NH3 decomposition. The good agreement between the LITD and the FTIR investigations indicated that the silicon containing LITD species correspond to silicon surface reaction intermediates.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Steven M. George, Steven M. George, Pawan Gupta, Pawan Gupta, Birgit G. Koehler, Birgit G. Koehler, Peter A. Coon, Peter A. Coon, A. C. Dillon, A. C. Dillon, C. H. Mak, C. H. Mak, } "Silicon surface kinetics studied using laser-induced thermal desorption", Proc. SPIE 1208, Laser Photoionization and Desorption Surface Analysis Techniques, (1 July 1990); doi: 10.1117/12.17871; https://doi.org/10.1117/12.17871
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