Paper
2 December 2021 Performance analysis of multilayer Ge/Si photodetector with quantum dots
Author Affiliations +
Proceedings Volume 12086, XV International Conference on Pulsed Lasers and Laser Applications; 120861X (2021) https://doi.org/10.1117/12.2613454
Event: XV International Conference on Pulsed Lasers and Laser Applications, 2021, Tomsk, Russian Federation
Abstract
This paper reports results of a theoretical study of multilayer Ge/Si infrared photodetector parameters calculations, these calculations are of certain characteristics of detectors such as: dark current photocurrent and detectivity.
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rahaf M. H. Douhan, Andrey P. Kokhanenko, and Kirill A. Lozovoy "Performance analysis of multilayer Ge/Si photodetector with quantum dots", Proc. SPIE 12086, XV International Conference on Pulsed Lasers and Laser Applications, 120861X (2 December 2021); https://doi.org/10.1117/12.2613454
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KEYWORDS
Quantum dots

Photodetectors

Electrons

Germanium

Silicon

Sensors

Signal detection

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