1 April 1990 Charge-transfer processes in semiconductor colloids
Author Affiliations +
Abstract
A picosecond transient absorption spectroscopy technique has been employed to probe the charge transfer processes in Ti02 semiconductor colloids. The trapping of electrons at the TiO surface (Ti4+ sitesY was characterized from the appearance of a broad absorption in the region of 550-750 nm following the 355-nm laser pulse excitation of Ti02 colloids. The lifetime of these trapped charge carriers increased upon incorporation of a hole scavenger in the colloidal semiconductor system. The mechanistic and kinetic details of the charge injection from excited CdS into a large bandgap semiconductor such as AgI and Ti02 have also been inves-' t i ga ted.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Prashant V. Kamat and K. R. Gopidas "Charge-transfer processes in semiconductor colloids", Proc. SPIE 1209, Picosecond and Femtosecond Spectroscopy from Laboratory to Real World, (1 April 1990); doi: 10.1117/12.17896; https://doi.org/10.1117/12.17896
PROCEEDINGS
8 PAGES


SHARE
Advertisement
Advertisement
Back to Top