Presentation + Paper
27 May 2022 1 GHz Low-noise InAlAsSb digital alloy avalanche photodiode receiver at short-wave infrared wavelengths
Author Affiliations +
Abstract
Recently a group from University of Virginia, demonstrated InAlAsSb digital alloy APDs operating in the 1-2 μm wavelengths with a very low excess noise, equivalent to silicon APDs. With a digital-alloy In0.3Al0.7AsSb multiplier, the excess noise is similar to that of Si APDs and the impact ionization parameter k is about 0.02 at gains >10. Using this digital alloy detector technology, our modeling calculations show that a noise equivalent power (NEP) comparable to HgCdTe APD receivers can be achieved at TE-cooled temperatures. Acqubit has designed and developed a 1 GHz receiver operating at -30°C using the InAlAsSb digital alloy APD designed for 2 μm wavelength operation. We measured an NEP of 600 fW/√Hz at 1.5 μm wavelength. In this presentation, we will present the receiver design and characterization results and modeling data to show the potential to achieve high sensitivity comparable to HgCdTe and Si receivers.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ping Yuan "1 GHz Low-noise InAlAsSb digital alloy avalanche photodiode receiver at short-wave infrared wavelengths", Proc. SPIE 12107, Infrared Technology and Applications XLVIII, 121070H (27 May 2022); https://doi.org/10.1117/12.2619039
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KEYWORDS
Avalanche photodetectors

Receivers

Signal to noise ratio

Aluminum

Oscilloscopes

Avalanche photodiodes

Short wave infrared radiation

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