1 July 1990 Optimization of strained-layer InxGa1-xAs/GaAs multiple quantum wells for electroabsorption modulation
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Proceedings Volume 1215, Digital Optical Computing II; (1990) https://doi.org/10.1117/12.18070
Event: OE/LASE '90, 1990, Los Angeles, CA, United States
Abstract
Electroabsorption modulation (EAM) in strained In(x)Ga(1-x)As/GaAs multiple-quantum-well structures grown by MBE is investigated for spatial-light-modulator applications. Since EAM near the exciton absorption peak always has significant insertion loss, the enhancement of modulation depth is discussed primarily in terms of the dynamic range, optimizing the change in transmission (Delta-T), instead of the contrast (on/off) ratio. The material properties of the InGaAs/GaAs strained-layer heterojunction make possible the growth of a large number of quantum wells, above the pseudomorphic thickness limit. The use of reflection instead of transmission modulators does not produce an increase in the maximum Delta-T but allows a reduction in the driving voltage.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shigeru Niki, Harry H. Wieder, William S. C. Chang, "Optimization of strained-layer InxGa1-xAs/GaAs multiple quantum wells for electroabsorption modulation", Proc. SPIE 1215, Digital Optical Computing II, (1 July 1990); doi: 10.1117/12.18070; https://doi.org/10.1117/12.18070
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