Quantum well structures for integrated optoelectronics

Dietrich W. Langer; M. Chen; Hyung G. Lee; M. Chmielowski

doi:10.1117/12.18071

1 July 1990 Quantum well structures for integrated optoelectronics

Dietrich W. Langer; M. Chen; Hyung G. Lee; M. Chmielowski

Author Affiliations +

Proceedings Volume 1215, Digital Optical Computing II; (1990) https://doi.org/10.1117/12.18071
Event: OE/LASE '90, 1990, Los Angeles, CA, United States

Abstract

The use of quantum well material resulted in speed and efficiency advantages in devices such as injection lasers and opto-electronic absorption modulators. Opto-electronic circuits need also waveguides, switches and detectors. The challenge lies further in finding suitable materials and process technologies for their integration. Because of the electric field dependence of quantum well transitions one finds an extremely strong electric field dependence of the refractive index in the vicinity of the wavelength which corresponds to the quantum well transition. This phenomenon can be exploited to make electro-refractive wave guide switches and modulators of higher speed and efficiency, operating at voltages which are comparable to those in electronic ICs.

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Dietrich W. Langer, Dietrich W. Langer, M. Chen, M. Chen, Hyung G. Lee, Hyung G. Lee, M. Chmielowski, M. Chmielowski, } "Quantum well structures for integrated optoelectronics", Proc. SPIE 1215, Digital Optical Computing II, (1 July 1990); doi: 10.1117/12.18071; https://doi.org/10.1117/12.18071

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