Performance improvement of InGaAs/InP SAGCM avalanche photodiode by optimizing the multiplication layer

Yangyang Zhao; Jun Chen

doi:10.1117/12.2626539

20 January 2022 Performance improvement of InGaAs/InP SAGCM avalanche photodiode by optimizing the multiplication layer

Yangyang Zhao, Jun Chen

Author Affiliations +

Proceedings Volume 12154, 13th International Photonics and OptoElectronics Meetings (POEM 2021); 121540F (2022) https://doi.org/10.1117/12.2626539
Event: 13th International Photonics and OptoElectronics Meetings (POEM 2021), 2021, Wuhan, China

Abstract

In optoelectronics and optical fiber communication, due to the wavelength coverage and the high sensitivity, InGaAs/InP avalanche photodiode (APD) has attracted more and more attentions. Herein, the InGaAsP/InP heterojunction was adopted in the multiplication layer. The absorption layer is composed of an intrinsic absorption layer and a depleted absorption layer. A new model of InGaAs/InP separate absorption, grading, charge and multiplication (SAGCM)-APD has been designed. The photocurrent, dark current and gain characteristics of the device were simulated. In addition, we also simulated the effect of heterojunction multiplication layer and charge layer on the punch-through voltage and break-down voltage of the device.

Citation Download Citation

Yangyang Zhao and Jun Chen "Performance improvement of InGaAs/InP SAGCM avalanche photodiode by optimizing the multiplication layer", Proc. SPIE 12154, 13th International Photonics and OptoElectronics Meetings (POEM 2021), 121540F (20 January 2022); https://doi.org/10.1117/12.2626539

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