1 May 1990 Amplified spontaneous emission effects in bulk and quantum well semiconductor laser amplifiers
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Abstract
We investigated the effects of increasing excitation on the performance of semiconductor laser amplifiers. Amplified spontaneous emission (ASE) is a limitation to the power scaling of these devices. A Rigrod analysis is used to study the effects of ASE on the gain, signal-to-noise ratio and efficiency for different values of injection current, facet reflectivity and input laser intensity. Comparisons are made between bulk and quantum well gain media.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Weng W. Chow, Weng W. Chow, Richard R. Craig, Richard R. Craig, } "Amplified spontaneous emission effects in bulk and quantum well semiconductor laser amplifiers", Proc. SPIE 1216, Nonlinear Optical Materials and Devices for Photonic Switching, (1 May 1990); doi: 10.1117/12.18120; https://doi.org/10.1117/12.18120
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