1 May 1990 Amplified spontaneous emission effects in bulk and quantum well semiconductor laser amplifiers
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Abstract
We investigated the effects of increasing excitation on the performance of semiconductor laser amplifiers. Amplified spontaneous emission (ASE) is a limitation to the power scaling of these devices. A Rigrod analysis is used to study the effects of ASE on the gain, signal-to-noise ratio and efficiency for different values of injection current, facet reflectivity and input laser intensity. Comparisons are made between bulk and quantum well gain media.
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Weng W. Chow, Weng W. Chow, Richard R. Craig, Richard R. Craig, "Amplified spontaneous emission effects in bulk and quantum well semiconductor laser amplifiers", Proc. SPIE 1216, Nonlinear Optical Materials and Devices for Photonic Switching, (1 May 1990); doi: 10.1117/12.18120; https://doi.org/10.1117/12.18120
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