Coulomb effects in optically excited semiconductor quantum dots

Yiping Z. Hu; Johan Markus Lindberg; Stephan W. Koch; Nasser Peyghambarian

doi:10.1117/12.18113

1 May 1990 Coulomb effects in optically excited semiconductor quantum dots

Yiping Z. Hu, Johan Markus Lindberg, Stephan W. Koch, Nasser Peyghambarian

Proceedings Volume 1216, Nonlinear Optical Materials and Devices for Photonic Switching; (1990) https://doi.org/10.1117/12.18113
Event: OE/LASE '90, 1990, Los Angeles, CA, United States

Abstract

The linear and nonlinear optical properties of semiconductor microcrystallites are analyzed taking into account the Coulomb interaction between the carriers and the influence of surface charges. A numerical matrix diagonalization method is used to evaluate the energy eigenvalues and the corresponding eigenstates. It is predicted that excited two-pair states lead to a pronounced induced absorption on the high energy side of the one-pair resonance. This prediction is confirmed by femtosecond and nanosecond experiments in CdSe and CdS quantum dots. Additionally, effects of traps or impurities and external dc electric fields are discussed.

Citation Download Citation

Yiping Z. Hu, Johan Markus Lindberg, Stephan W. Koch, and Nasser Peyghambarian "Coulomb effects in optically excited semiconductor quantum dots", Proc. SPIE 1216, Nonlinear Optical Materials and Devices for Photonic Switching, (1 May 1990); https://doi.org/10.1117/12.18113

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