1 May 1990 Vertical cavity surface emitting laser diodes
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Abstract
Vertical cavity surface emitting lasers (VCSELs) were realized in MBE-grown GaAS/A1GaAS and MOVPE-grown InGaAsPf.EnP material systems with emission wavelengths near 0.87 and 1.3 p.m. respectively. The GaAS/A1GaAS VCSELs incorporating epitaxially grown DBR mirrors on both sides of the cavities were operated at room temperature cw condition with maximum output power greater than 1 mW. The InGaAsP/InP VCSEL, which employed a much simpler cavity structure containing metal and dielectric mirrors, operated up to 220 K with a threshold current as low as 5 mA at 77K, indicating that improvements on the cavity design should yield room temperature lasing operation. Single longitudinal mode emission and circular near- and far-field patterns were observed for the two VCSEL structures.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kuochou Tai, Kuochou Tai, L. Yang, L. Yang, R. J. Fischer, R. J. Fischer, Tawee Tanbun-Ek, Tawee Tanbun-Ek, Ralph A. Logan, Ralph A. Logan, Yan H. Wang, Yan H. Wang, Minghwei Hong, Minghwei Hong, Alfred Y. Cho, Alfred Y. Cho, } "Vertical cavity surface emitting laser diodes", Proc. SPIE 1216, Nonlinear Optical Materials and Devices for Photonic Switching, (1 May 1990); doi: 10.1117/12.18117; https://doi.org/10.1117/12.18117
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