1 May 1990 Vertical cavity surface emitting laser diodes
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Abstract
Vertical cavity surface emitting lasers (VCSELs) were realized in MBE-grown GaAS/A1GaAS and MOVPE-grown InGaAsPf.EnP material systems with emission wavelengths near 0.87 and 1.3 p.m. respectively. The GaAS/A1GaAS VCSELs incorporating epitaxially grown DBR mirrors on both sides of the cavities were operated at room temperature cw condition with maximum output power greater than 1 mW. The InGaAsP/InP VCSEL, which employed a much simpler cavity structure containing metal and dielectric mirrors, operated up to 220 K with a threshold current as low as 5 mA at 77K, indicating that improvements on the cavity design should yield room temperature lasing operation. Single longitudinal mode emission and circular near- and far-field patterns were observed for the two VCSEL structures.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kuochou Tai, Kuochou Tai, L. Yang, L. Yang, R. J. Fischer, R. J. Fischer, Tawee Tanbun-Ek, Tawee Tanbun-Ek, Ralph A. Logan, Ralph A. Logan, Yan H. Wang, Yan H. Wang, Minghwei Hong, Minghwei Hong, Alfred Y. Cho, Alfred Y. Cho, "Vertical cavity surface emitting laser diodes", Proc. SPIE 1216, Nonlinear Optical Materials and Devices for Photonic Switching, (1 May 1990); doi: 10.1117/12.18117; https://doi.org/10.1117/12.18117
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