Research on parameter extraction of GaN HEMT equivalent circuit model based on genetic algorithm

Limin Zhang; Tiancheng Zhang; Lin Wang; Huaguang Bao; Dazhi Ding

doi:10.1117/12.2624152

27 March 2022 Research on parameter extraction of GaN HEMT equivalent circuit model based on genetic algorithm

Limin Zhang, Tiancheng Zhang, Lin Wang, Huaguang Bao, Dazhi Ding

Proceedings Volume 12169, Eighth Symposium on Novel Photoelectronic Detection Technology and Applications; 121694N (2022) https://doi.org/10.1117/12.2624152
Event: Eighth Symposium on Novel Photoelectronic Detection Technology and Applications, 2021, Kunming, China

Abstract

GaN, as the third generation semiconductor material, has attracted much attention because of its superior properties. The GaN equivalent circuit model is the basis of microwave device characteristics research and circuit design optimization. Fast extraction of circuit model parameters by optimization algorithm can accurately establish the device model. This paper presents an efficient genetic optimization algorithm to quickly extract GaN equivalent circuit parameters and obtain the optimal values of model parameters with ADS software. Considering the non-linearity in the large signal circuit model, based on the measured I-V and C-V characteristics curves under different bias voltage, the parameters in the non-linear model are extracted by using genetic algorithm, and the simulation results are compared with the measured results[3]. The comparison results are expressed in the range of 0.1~40GHz, and the model fits well. The accuracy of the proposed parameter optimization method is verified.

Citation Download Citation

Limin Zhang, Tiancheng Zhang, Lin Wang, Huaguang Bao, and Dazhi Ding "Research on parameter extraction of GaN HEMT equivalent circuit model based on genetic algorithm", Proc. SPIE 12169, Eighth Symposium on Novel Photoelectronic Detection Technology and Applications, 121694N (27 March 2022); https://doi.org/10.1117/12.2624152

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