1 June 1990 High-modulation-rate potential for surface emitter laser diode arrays
Author Affiliations +
Proceedings Volume 1217, Optoelectronic Signal Processing for Phased-Array Antennas II; (1990); doi: 10.1117/12.18151
Event: OE/LASE '90, 1990, Los Angeles, CA, United States
Abstract
A vertical-cavity surface-emitting laser diode capable of narrow-line emission at injection currents below 1 mA during room temperature dc operation is described. It is estimated that surface-emitting laser diodes can potentially be modulated to speeds as high as 30 GHz. It is argued that phased array operation at high output powers should be possible, but that problems with thermal performance, wafer uniformity, and circuit layout need to be resolved.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Thaddeus G. Dziura, Y. J. Yang, S. C. Wang, "High-modulation-rate potential for surface emitter laser diode arrays", Proc. SPIE 1217, Optoelectronic Signal Processing for Phased-Array Antennas II, (1 June 1990); doi: 10.1117/12.18151; http://dx.doi.org/10.1117/12.18151
PROCEEDINGS
7 PAGES


SHARE
KEYWORDS
Semiconductor lasers

Modulation

Mirrors

Optoelectronics

Semiconducting wafers

Antennas

Signal processing

Back to Top