A novel 3300V conductivity modulation enhanced IGBT with P-type Schottky contact and partial N-type buried layer

Yifei Lan; Jinping Zhang; Rongrong Zhu; Jiang Liu; Rui Jin; Yaohua Wang; Bo Zhang

doi:10.1117/12.2634548

4 May 2022 A novel 3300V conductivity modulation enhanced IGBT with P-type Schottky contact and partial N-type buried layer

Yifei Lan, Jinping Zhang, Rongrong Zhu, Jiang Liu, Rui Jin, Yaohua Wang, Bo Zhang

Author Affiliations +

Proceedings Volume 12172, International Conference on Electronic Information Engineering and Computer Communication (EIECC 2021); 121721W (2022) https://doi.org/10.1117/12.2634548
Event: International Conference on Electronic Information Engineering and Computer Communication (EIECC 2021), 2021, Nanchang, China

Abstract

A novel 3300V conductivity modulation enhanced planar gate IGBT (CE-IGBT) with P-type Schottky contact and partial N-type buried layer is proposed. The proposed CE-IGBT features a P-type Schottky contact between the P-base region and emitter metal as well as a partial highly-doped N-type buried layer located in the P-base region. The Schottky contact forms a hole barrier by increasing the potential of the P-base region and the N-type buried layer suppresses the hole flowing above it. The simulation results show that compared with the conventional planar gate IGBT (Con-IGBT), the proposed CE-IGBT not only reduces the on-state voltage drop (V_ceon) but also improves the trade-off relationship between the V_ceon and turn-off power loss (E_off). Compared with the Con-IGBT, the V_ceon of the CE-IGBT with same P-base doping concentration is reduced by 32.7%, and the CE-IGBT pro with same threshold voltage (V_th) is reduced by 30.9%. At same V_ceonof 2.65 V, compared with the Con-IGBT, the E_off of the CE-IGBT and CE-IGBT pro is reduced by 37.3% and 34.9%, respectively. Moreover, the proposed device demonstrates good reverse biased safe operating area (RBSOA).

Citation Download Citation

Yifei Lan, Jinping Zhang, Rongrong Zhu, Jiang Liu, Rui Jin, Yaohua Wang, and Bo Zhang "A novel 3300V conductivity modulation enhanced IGBT with P-type Schottky contact and partial N-type buried layer", Proc. SPIE 12172, International Conference on Electronic Information Engineering and Computer Communication (EIECC 2021), 121721W (4 May 2022); https://doi.org/10.1117/12.2634548

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
7 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Field effect transistors

Modulation

Metals

Doping

Reliability

Computer simulations

Oxides

Show All Keywords

Keywords/Phrases

Search In:

Publication Years