780-nm high-power laser diode fabricated by metal organic chemical vapor deposition technique

Yoichiro Ohta; Tetsuya Yagi; Hitoshi Kagawa; Hideyo Higuchi; Kuniki Tamari; Yuzo Kashimoto

doi:10.1117/12.18249

1 May 1990 780-nm high-power laser diode fabricated by metal organic chemical vapor deposition technique

Yoichiro Ohta, Tetsuya Yagi, Hitoshi Kagawa, Hideyo Higuchi, Kuniki Tamari, Yuzo Kashimoto

Proceedings Volume 1219, Laser Diode Technology and Applications II; (1990) https://doi.org/10.1117/12.18249
Event: OE/LASE '90, 1990, Los Angeles, CA, United States

Abstract

The 780nm 35mW I2SPB lasers(Inverted Inner Stripe Laser with a p- GaAs Buffer Layer) with a thin active layer have been successflly developed by employing MOCVD. Accelerated aging tests on the ISPB lasers with the cavity length of 400iim at 60 °C, 30mW project lifetimes (MTTF) greater than l0000hrs. The narrow standard deviations of beam divergences parallel and perpendicullar to the junction plane, respectively 0.18 and O.2Odeg, are achieved. The small astigmatic distance less than 6iim and the high optical S/N ratio more than 65dB (at f=2OkHz, BW=300Hz and P=3OmW) are obtained. These exellent results indicate that the I2SPB lasers are available for the Magneto-Optical Disk (MOD) applications.

Citation Download Citation

Yoichiro Ohta, Tetsuya Yagi, Hitoshi Kagawa, Hideyo Higuchi, Kuniki Tamari, and Yuzo Kashimoto "780-nm high-power laser diode fabricated by metal organic chemical vapor deposition technique", Proc. SPIE 1219, Laser Diode Technology and Applications II, (1 May 1990); https://doi.org/10.1117/12.18249

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