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1 May 1990 Characteristics of high-power, InGaAs/AlGaAs laser diodes
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Both gain-guided and index-guided InGaAs/AlGaAs pseudomorphic laser diodes have been fabricated and tested. The characteristics are similar to lattice-matched GaAs/AlGaAs lase diodes in that the threshold current, differential efficiency, and maximum output powers are comparable. Output powers of 3 W CW have been achieved at 960 nm from a 100 micron aperture laser. An increase in the gain coefficient by 30 percent has been measured in the lasers with strained active regions. Single-mode lasers have also been fabricated which operate to 350 mW, 180 mW in a single transverse and longitudinal mode.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David F. Welch, Christian F. Schaus, Shang Zhu Sun, Max Cardinal, William S. Streifer, and Donald R. Scifres "Characteristics of high-power, InGaAs/AlGaAs laser diodes", Proc. SPIE 1219, Laser Diode Technology and Applications II, (1 May 1990);

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