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1 May 1990 Fabrication of microlenses in compound semiconductors and monolithic integration with diode lasers
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Abstract
Large-numerical-aperture microlenses have been fabricated in compound semiconductors by chemical etching and mass transport (surface-energy minimization) and have been monolithically integrated with GaInAsP/InP surface-emitting lasers. The microlenses showed smooth surface, accurate profiles, and near diffraction-limited beam collimation. Techniques have been developed for accurate alignment between microlenses and buried-heterostructure waveguide gain regions fabricated on opposite sides of a substrate. The integrated devices showed room-temperature pulsed threshold currents of 70 mA, narrow beam divergence of 1.25 deg, and are potentially advantageous for fiber coupling, optical interconnects, laser-array applications, etc.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zong-Long Liau, James N. Walpole, Vicky Diadiuk, Daniel E. Mull, and Leo J. Missaggia "Fabrication of microlenses in compound semiconductors and monolithic integration with diode lasers", Proc. SPIE 1219, Laser Diode Technology and Applications II, (1 May 1990); https://doi.org/10.1117/12.18265
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