1 May 1990 Fundamental transverse mode 100-mW semiconductor laser with high reliability
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Abstract
A 100 mW high-power AlGaAs laser with the current-blocking regions near the facets and a long cavity length has been developed. The length and the channel width of the current-blocking region, and cavity length were examined in order to obtain a high-output power. As a result, a stable fundamental transverse mode operation is obtained up to 180 mW, and maximum output power is 230 mW under CW operation. Stable operation under 100 mW of output power was confirmed for more than 2000 hours at 60 C.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takao Yamaguchi, Takao Yamaguchi, Keiichi Yodoshi, Keiichi Yodoshi, Kimihide Minakuchi, Kimihide Minakuchi, Yasuaki Inoue, Yasuaki Inoue, Koji Komeda, Koji Komeda, Norio Tabuchi, Norio Tabuchi, Yasuyuki Bessho, Yasuyuki Bessho, Kazushi Mori, Kazushi Mori, Tatsuhiko Niina, Tatsuhiko Niina, } "Fundamental transverse mode 100-mW semiconductor laser with high reliability", Proc. SPIE 1219, Laser Diode Technology and Applications II, (1 May 1990); doi: 10.1117/12.18248; https://doi.org/10.1117/12.18248
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