High-power GaInAsP laser diodes on p-type substrate

Hideaki Horikawa; Hiroshi Wada; Saeko Oshiba; Koji Yamada; Yoh Ogawa; Yoshio Kawai

doi:10.1117/12.18244

1 May 1990 High-power GaInAsP laser diodes on p-type substrate

Hideaki Horikawa, Hiroshi Wada, Saeko Oshiba, Koji Yamada, Yoh Ogawa, Yoshio Kawai

Proceedings Volume 1219, Laser Diode Technology and Applications II; (1990) https://doi.org/10.1117/12.18244
Event: OE/LASE '90, 1990, Los Angeles, CA, United States

Abstract

The application of high power single emitter lasers to coherent optical communication is studied. Measurements of laser properties essential to heterodyne detection systems are presented for high power lasers and compared to standard single mode 30 mW laser diodes. The advantages of the new high power laser structures are demonstrated in a heterodyne frequency-shift-keyed communication system.

Citation Download Citation

Hideaki Horikawa, Hiroshi Wada, Saeko Oshiba, Koji Yamada, Yoh Ogawa, and Yoshio Kawai "High-power GaInAsP laser diodes on p-type substrate", Proc. SPIE 1219, Laser Diode Technology and Applications II, (1 May 1990); https://doi.org/10.1117/12.18244

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