1 May 1990 High-power GaInAsP laser diodes on p-type substrate
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Abstract
The application of high power single emitter lasers to coherent optical communication is studied. Measurements of laser properties essential to heterodyne detection systems are presented for high power lasers and compared to standard single mode 30 mW laser diodes. The advantages of the new high power laser structures are demonstrated in a heterodyne frequency-shift-keyed communication system.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hideaki Horikawa, Hideaki Horikawa, Hiroshi Wada, Hiroshi Wada, Saeko Oshiba, Saeko Oshiba, Koji Yamada, Koji Yamada, Yoh Ogawa, Yoh Ogawa, Yoshio Kawai, Yoshio Kawai, } "High-power GaInAsP laser diodes on p-type substrate", Proc. SPIE 1219, Laser Diode Technology and Applications II, (1 May 1990); doi: 10.1117/12.18244; https://doi.org/10.1117/12.18244
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