1 May 1990 Improvement of high-power characteristics of 780-nm AlGaAs laser diode by (NH4)2S facet treatment
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Proceedings Volume 1219, Laser Diode Technology and Applications II; (1990); doi: 10.1117/12.18268
Event: OE/LASE '90, 1990, Los Angeles, CA, United States
Coherent cw operation has been obtained with a 10x4 array of Grating Surface Emitting (GSE) lasers consisting of 40 lasers and 50 emitting sections. The array is a GaAs quantum well device, grown on an A1GaAs substrate, operating at 861 nm to which the substrate is transparent. It is mounted p-down to metallized traces on a BeO slab to provide isolated electrical contacts and thermal contact to a simple chilled-water cooler. A single spectral line 0.5 A wide indicates coupling of the 40 laser sections. More detailed measurements on a section of an array containing ten laterally coupled lasers, 20 outputs, show that it is operating at a junction temperature of 30°C, has a line width of 0.1 5A, and a measured coherence of >75%. The expected wavelength stabilization with temperature due to the DBR grating is found, with a value of =0.6A/°C. An array of 4 longitudinally coupled lasers produced a line width of 130MHz and evidence of high coherence.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hidenori Kawanishi, Hirotaka Ohno, Taiji Morimoto, Shinji Kaneiwa, Nobuyuki Miyauchi, Hiroshi Hayashi, Yoshiro Akagi, Yoshiharu Nakajima, Toshiki Hijikata, "Improvement of high-power characteristics of 780-nm AlGaAs laser diode by (NH4)2S facet treatment", Proc. SPIE 1219, Laser Diode Technology and Applications II, (1 May 1990); doi: 10.1117/12.18268; https://doi.org/10.1117/12.18268

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