1 May 1990 Improvement of high-power characteristics of 780-nm AlGaAs laser diode by (NH4)2S facet treatment
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Proceedings Volume 1219, Laser Diode Technology and Applications II; (1990); doi: 10.1117/12.18268
Event: OE/LASE '90, 1990, Los Angeles, CA, United States
Abstract
Coherent cw operation has been obtained with a 10x4 array of Grating Surface Emitting (GSE) lasers consisting of 40 lasers and 50 emitting sections. The array is a GaAs quantum well device, grown on an A1GaAs substrate, operating at 861 nm to which the substrate is transparent. It is mounted p-down to metallized traces on a BeO slab to provide isolated electrical contacts and thermal contact to a simple chilled-water cooler. A single spectral line 0.5 A wide indicates coupling of the 40 laser sections. More detailed measurements on a section of an array containing ten laterally coupled lasers, 20 outputs, show that it is operating at a junction temperature of 30°C, has a line width of 0.1 5A, and a measured coherence of >75%. The expected wavelength stabilization with temperature due to the DBR grating is found, with a value of =0.6A/°C. An array of 4 longitudinally coupled lasers produced a line width of 130MHz and evidence of high coherence.
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Hidenori Kawanishi, Hirotaka Ohno, Taiji Morimoto, Shinji Kaneiwa, Nobuyuki Miyauchi, Hiroshi Hayashi, Yoshiro Akagi, Yoshiharu Nakajima, Toshiki Hijikata, "Improvement of high-power characteristics of 780-nm AlGaAs laser diode by (NH4)2S facet treatment", Proc. SPIE 1219, Laser Diode Technology and Applications II, (1 May 1990); doi: 10.1117/12.18268; https://doi.org/10.1117/12.18268
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