1 May 1990 Low threshold current coplanar vertical injection laser diode for optoelectronic integrated circuits
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Abstract
A low threshold coplanar vertical injection laser diode (CPVI-LD) has been newly developed utilizing impurityinduced disordering of a single quantum well. The threshold current as low as 13 mA has been realized in CW operation. The behavior of Si and Zn solid phase diffusion is precisely investigated for the realization of the CPVJ-LD.
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Shogo Takahashi, Shogo Takahashi, Katsuhiko Goto, Katsuhiko Goto, H. Uesugi, H. Uesugi, Harumi Nishiguchi, Harumi Nishiguchi, Etsuji Omura, Etsuji Omura, Hirofumi Namizaki, Hirofumi Namizaki, "Low threshold current coplanar vertical injection laser diode for optoelectronic integrated circuits", Proc. SPIE 1219, Laser Diode Technology and Applications II, (1 May 1990); doi: 10.1117/12.18242; https://doi.org/10.1117/12.18242
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