Mode control of broad-area semiconductor lasers using unstable resonators

Michael L. Tilton; Gregory C. Dente; Alan H. Paxton

doi:10.1117/12.18281

1 May 1990 Mode control of broad-area semiconductor lasers using unstable resonators

Michael L. Tilton, Gregory C. Dente, Alan H. Paxton

Proceedings Volume 1219, Laser Diode Technology and Applications II; (1990) https://doi.org/10.1117/12.18281
Event: OE/LASE '90, 1990, Los Angeles, CA, United States

Abstract

Several on-the-chip designs of diffraction-limited, broad-area semiconductor lasers are described. In all cases, the devices achieve single lateral-mode operation as unstable resonators with magnifications greater than, or approximately equal to, two. In the first class of devices, the unstable resonator is realized by creating a diverging mirror at the outcoupling facet. In the second class, a diverging quadratic index profile is created under the active region so that the divergence is distributed uniformly between the front and back facets. The modeling shows that optimum device designs exist for both types of devices. For these optimum designs, stable diffraction-limited operation is predicted for up to six times threshold.

Citation Download Citation

Michael L. Tilton, Gregory C. Dente, and Alan H. Paxton "Mode control of broad-area semiconductor lasers using unstable resonators", Proc. SPIE 1219, Laser Diode Technology and Applications II, (1 May 1990); https://doi.org/10.1117/12.18281

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