1 May 1990 Operating characteristics of strained InGaAs/AlGaAs quantum well lasers
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Proceedings Volume 1219, Laser Diode Technology and Applications II; (1990); doi: 10.1117/12.18239
Event: OE/LASE '90, 1990, Los Angeles, CA, United States
Abstract
High-performance strained InGaAs/AlGaAs lasers fabricated from material grown by atmospheric pressure organometallic vapor phase epitaxy are demonstrated in a variety of structures. The results suggest that the poorer performance observed in the longer wavelength, more highly strained structures is due to an increasing density of interfacial defects even in quantum wells (QWs) of subcritical thickness. Despite this, a graded QW structure improved the performance of highly strained QW lasers, presumably because it reduces lattice mismatch at the active region interfaces. Long-lived InGaAs QW lasers are demonstrated, and strained layer materials are applied to two kinds of two-dimensional laser arrays with performance comparable to GaAs QW lasers
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David P. Bour, Ramon U. Martinelli, Gary A. Evans, Nils W. Carlson, Dean B. Gilbert, Michael Ettenberg, "Operating characteristics of strained InGaAs/AlGaAs quantum well lasers", Proc. SPIE 1219, Laser Diode Technology and Applications II, (1 May 1990); doi: 10.1117/12.18239; https://doi.org/10.1117/12.18239
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KEYWORDS
Quantum wells

Laser applications

Interfaces

Gallium arsenide

Indium gallium arsenide

Laser damage threshold

Quantum efficiency

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