1 May 1990 Polarization-dependent gain and gain saturation in strained semiconductor lasers
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Abstract
Various power-versus-current characteristics of TE and TM emission from 1.3-pm InGaAsP/InP semiconductor lasers are observed. They are categorized into the single-plarization lasers, the two-polarization coexisting lasers, and the two-polarization switching lasers. A polarization-related rate-equation model with self-saturation and crosssaturation terms are proposed to simulate these measurements. Emission of only one polarization is explained by large difference of gain and loss between the two polarization modes. Coexisting or switching of both polarizations is determined by the self-saturation and cross-saturation of the gain of the two polarization. The rate equation model is justified by the strain-dependent susceptibility. Several possible sources of strain are the slight lattice-mismatch, the superficial silicon-dioxide, and the die bonding and handling.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ben-mou Yu, Ben-mou Yu, Jia-ming Liu, Jia-ming Liu, Joanne S. LaCourse, Joanne S. LaCourse, } "Polarization-dependent gain and gain saturation in strained semiconductor lasers", Proc. SPIE 1219, Laser Diode Technology and Applications II, (1 May 1990); doi: 10.1117/12.18280; https://doi.org/10.1117/12.18280
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