1 May 1990 Reliability characteristics of high-power laser diodes
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Two types of high-power GaAlAs single-element lasers with nonabsorbing mirrors are described. One is a high-power laser which oscillates at wavelengths as short as 780 nm. The difficulty of growth on high AlAs-content surface has been overcome by optimizing the flow rate of arsine in the covering MOCVD growth. The fabricated 780-nm nonabsorbing mirror-buried twin-ridge substrate (NAM-BTRS) laser has achieved maximum output power of 200 mW due to complete suppression of catastrophic optical damage together with remarkable improvement in reliability by suppressing mirror degradation. The other type or NAM structure laser is a built-in composite-cavity laser which has achieved stable longitudinal mode operation in a temperature range as wide as 50 C for output powers from 3 mW to 100 mW without mode hopping as a result of mode selectivity in the composite-cavity NAM-BTRS laser.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David F. Welch, Hsing H. Kung, Masamichi Sakamoto, Erik P. Zucker, William S. Streifer, Donald R. Scifres, "Reliability characteristics of high-power laser diodes", Proc. SPIE 1219, Laser Diode Technology and Applications II, (1 May 1990); doi: 10.1117/12.18246; https://doi.org/10.1117/12.18246


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