1 May 1990 Switching technology from dc to GHz using 2-D semiconductor laser arrays
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This paper describes the use of a generic switch from dc to GHz frequencies comprising a two-dimensional semiconductor laser diode array and a Si device. A single two-sided PIN device, activated by two 1 kW laser arrays yielded a holding voltage of 1.3 kV and conducted 192 A. The 'on' time of this 1/4 MW switch was 290 ns. In addition, this paper describes the use of optically controlled devices at HF (2-30 MHz) using high voltage PIN diodes as switching devices, and a unique optically controlled attenuator/switch at 60 GHz using a Si slab inside a waveguide. PIN devices tested in an RF circuit between 2.5 and 30 MHz yielded isolation between 28 and 49 dB in the off-state and insertion losses as low as 0.1 dB when illuminated with 280 W of optical power. Measurements at 60 GHz have shown a 0.9 dB insertion loss in the on-state, and an isolation value of better than 21 dB in the off-state.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Arye Rosen, Paul J. Stabile, W. M. Janton, A. M. Gombar, J. Delmaster, Richard Hurwitz, Peter R. Herczfeld, A. Bahasadri, "Switching technology from dc to GHz using 2-D semiconductor laser arrays", Proc. SPIE 1219, Laser Diode Technology and Applications II, (1 May 1990); doi: 10.1117/12.18289; https://doi.org/10.1117/12.18289

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