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1 May 1990 Development of free-electron lasers for XUV projection lithography
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Proceedings Volume 1227, Free-Electron Lasers and Applications; (1990)
Event: OE/LASE '90, 1990, Los Angeles, CA, United States
Future ti-linac-driven FELs, operating in the range from 4 nm to 100 nm, could be excellent exposure tools for extending the resolution limit of projection optical lithography to □O.1 m and with adequate total depth of focus (1 to 2 Rm). When operated at a moderate duty rate of □1%, XUV EELs should be able to supply sufficient average power to support high-volume chip production. Recent developments of the electron beam, magnetic undulator, and resonator mirrors are described which raise our expectation that FEL operation below 1 00 nm is almost ready for demonstration. Included as a supplement is a review of initial design studies of the reflecting XUV projection optics, fabrication of reflection masks, characterization of photoresists, and the first experimental demonstrations of the capability of projection lithography with 14-nm radiation to produce lines and spaces as small as 0.05 m.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Brian Emerson Newnam "Development of free-electron lasers for XUV projection lithography", Proc. SPIE 1227, Free-Electron Lasers and Applications, (1 May 1990);

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