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7 December 2022 Design, fabrication and performance of planar Ge-on-Si single-photon avalanche diode at 1550 nm
Xin Yi, Fiona Fleming, Jaroslaw Kirdoda, Ross W. Millar, Bhavana Benakaprasad, Conor Coughlan, Charles Smith, Muhammad M. Mirza, Scott Watson, Lisa Saalbach, Douglas J. Paul, Gerald S. Buller
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Proceedings Volume 12274, Emerging Imaging and Sensing Technologies for Security and Defence VII; 122740B (2022) https://doi.org/10.1117/12.2637854
Event: SPIE Security + Defence, 2022, Berlin, Germany
Abstract
Semiconductor based single-photon avalanche diode (SPAD) detectors are widely used in quantum technology applications, which focus on the arrival time of single photons. Using germanium as the absorption region in a Separate Absorption and Multiplication design solves the operating limitation beyond the spectrum range of silicon, i.e. typically at a wavelength of ~ 1000 nm. Our first-generation planar geometry Ge-on-Si single-photon avalanche diodes utilised a 1000 nm Germanium absorption region and showed extremely low noise-equivalent-power of 7.7 × 10−17 WHz−½ at a wavelength of 1310 nm. We demonstrate new structures designed to achieve high single-photon detection efficiency at a wavelength of 1550 nm.
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Xin Yi, Fiona Fleming, Jaroslaw Kirdoda, Ross W. Millar, Bhavana Benakaprasad, Conor Coughlan, Charles Smith, Muhammad M. Mirza, Scott Watson, Lisa Saalbach, Douglas J. Paul, and Gerald S. Buller "Design, fabrication and performance of planar Ge-on-Si single-photon avalanche diode at 1550 nm", Proc. SPIE 12274, Emerging Imaging and Sensing Technologies for Security and Defence VII, 122740B (7 December 2022); https://doi.org/10.1117/12.2637854
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KEYWORDS
Absorption
Avalanche photodiodes
Silicon
Germanium
Sensors
Boron
Electronics
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