Irradiation effect of silicon irradiated by near-infrared pulsed laser

Ming Guo; Yong-xiang Zhang; Yue-shu Feng; Nan Li

doi:10.1117/12.2619676

8 July 2022 Irradiation effect of silicon irradiated by near-infrared pulsed laser

Ming Guo, Yong-xiang Zhang, Yue-shu Feng, Nan Li

Proceedings Volume 12280, 2021 International Conference on Optical Instruments and Technology: Advanced Laser Technology and Applications; 122800B (2022) https://doi.org/10.1117/12.2619676
Event: 2021 International Conference on Optical Instruments and Technology, 2022, Online Only

Abstract

In order to explore the law and mechanism of the action of near-infrared pulsed laser on silicon materials, 1064nm nanosecond pulsed laser and millisecond pulsed laser were used to act on silicon materials, and the damage effects of single nanosecond laser and millisecond-nanosecond combined laser were studied. Analyze the real-time evolution of plasma in laser irradiation process, reveal the mechanism of damage morphology, and discuss the influence and law of laser energy density and other parameters on the damage effect. Studies have shown that the plasma generated by a single nanosecond laser acting on silicon instantly forms a shock wave surface, which expands against the laser transmission direction. As the laser energy density increases, the plasma generation speed increases, and denser plasma clusters are formed. The ablation of the morphology is aggravated. When the millisecond-nanosecond combined pulse laser is applied, the delay time between two pulses is an important parameter that affects the effect. During the millisecond pulse time, as the delay time increases, the peak temperature rises. The same energy density combined laser acts on silicon under different delay time conditions, the damage morphology is quite different. The material properties of the silicon target change under the action of the millisecond pulse laser. The delay time determines the nanosecond injection in the shape of the specific silicon target. The nanosecond laser will give impact to the damaged silicon target. The cleavage damage morphology was observed under the action of the combined pulsed laser. This article can provide a reference for the research of laser processing and anti-laser damage silicon materials.

Citation Download Citation

Ming Guo, Yong-xiang Zhang, Yue-shu Feng, and Nan Li "Irradiation effect of silicon irradiated by near-infrared pulsed laser", Proc. SPIE 12280, 2021 International Conference on Optical Instruments and Technology: Advanced Laser Technology and Applications, 122800B (8 July 2022); https://doi.org/10.1117/12.2619676

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
6 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Silicon

Semiconductor lasers

Pulsed laser operation

Plasma

Laser energy

Laser ablation

Laser applications

Show All Keywords

Keywords/Phrases

Search In:

Publication Years