Direct print EUV patterning of tight pitch metal layers for Intel 18A process technology node

R. Venkatesan; C. Guven; D. Bhawe; A. R. Greenwood; Z. Zhang; P. Gupta; P. Saksena; R. Rodriguez; N. Moumen; B. Bains; M. Aykol; C. Wallace; R. Bigwood; K. Fischer

doi:10.1117/12.2641744

1 December 2022 Direct print EUV patterning of tight pitch metal layers for Intel 18A process technology node

R. Venkatesan, C. Guven, D. Bhawe, A. R. Greenwood, Z. Zhang, P. Gupta, P. Saksena, R. Rodriguez, N. Moumen, B. Bains, M. Aykol, C. Wallace, R. Bigwood, K. Fischer

Author Affiliations +

Proceedings Volume 12292, International Conference on Extreme Ultraviolet Lithography 2022; 1229202 (2022) https://doi.org/10.1117/12.2641744
Event: SPIE Photomask Technology + EUV Lithography, 2022, Monterey, California, United States

Abstract

This paper describes the direct print Extreme Ultra Violet (EUV) technology used for lithographic patterning of 30-36 nm pitch metal layers of Intel 18A technology node. Direct print EUV delivers cost effective pitch scaling to enable flexible design rules and ease of use for layout designers. Careful co-optimization of the illumination source, photoresist and lithography stack is essential to resolve the tightest pitches. Optimum CDSEM metrology conditions and EUV specific requirements such as full field correction with thru slit, flare and black border compensation are critical to improve the quality of the optical proximity correction (OPC) flows. OPC algorithms were used to maximize the process window by using width sizing and pitch shifting to meet lithographic printability criteria while pushing mask manufacturability constraints to their healthy limits. The sizing of metal lines is modelled and fed to the RC extraction flows to close the fabdesign house feedback loop to improve accuracy of timing closure. Multiple test masks were specifically designed to increase sensitivity of defect metrology and accelerate yield learning. Our results from multiple product vehicles demonstrate achievement of technology readiness milestones.

Conference Presentation

Citation Download Citation

R. Venkatesan, C. Guven, D. Bhawe, A. R. Greenwood, Z. Zhang, P. Gupta, P. Saksena, R. Rodriguez, N. Moumen, B. Bains, M. Aykol, C. Wallace, R. Bigwood, and K. Fischer "Direct print EUV patterning of tight pitch metal layers for Intel 18A process technology node", Proc. SPIE 12292, International Conference on Extreme Ultraviolet Lithography 2022, 1229202 (1 December 2022); https://doi.org/10.1117/12.2641744

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available