1 July 1990 Dark-current of field-assisted GaAs semiconductor photocathodes
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Proceedings Volume 1230, International Conference on Optoelectronic Science and Engineering '90; 12300F (1990) https://doi.org/10.1117/12.2294652
Event: The Marketplace for Industrial Lasers 1990, 1990, Chicago, IL, United States
Abstract
The dark-current of GaAs field-assisted photocathodes with red and near infrared response is larger than that of common GaAs photocathodes. The major source of dark- current of the photocathodes is impact ionization of hot holes in high field deple- tion region. In this paper, a model and creating mechanism of impact ionization in the photocathodes is described in detail, and a specific expression of the dark-curren of the photocathodes at different operation conditions can be predicted once the appro- priate parameters have been determined. It may be helpful to design a field-assisted photocathode and choose an optimum operation condition.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jinmin Li, "Dark-current of field-assisted GaAs semiconductor photocathodes", Proc. SPIE 1230, International Conference on Optoelectronic Science and Engineering '90, 12300F (1 July 1990); doi: 10.1117/12.2294652; https://doi.org/10.1117/12.2294652
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