1 July 1990 A study of the semiconductor colour-sensing detector
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Proceedings Volume 1230, International Conference on Optoelectronic Science and Engineering '90; 12300S (1990) https://doi.org/10.1117/12.2294665
Event: The Marketplace for Industrial Lasers 1990, 1990, Chicago, IL, United States
Abstract
The semiconductor colour-sensing detector is composed of two parts: a colour-sensing device and a processing circuit. The design of the colour-sensing device is based on the principle of the colour mixture of the three base colours, light of different colours having different transmission depthes in silicon(red is the deepest, blue the shallowest, and green the medium). For the three depthes in silicon correspond to three base colours, plancediffusion technique or ion implantation technique is used to form three PNJs with different depthes and the PNJs filter colours automatically. When shone by white light, each of the three PNJs generates a photocurren simultaneously. When the three PNJs are shone by a light of one of the three base colours, only one photocurrent is generated by the corresponing PNJ.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Biao Chen, "A study of the semiconductor colour-sensing detector", Proc. SPIE 1230, International Conference on Optoelectronic Science and Engineering '90, 12300S (1 July 1990); doi: 10.1117/12.2294665; https://doi.org/10.1117/12.2294665
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