1 July 1990 Measurements of crystallization velocity and activation energy in the optical recording films with In-Sb-Te system
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Proceedings Volume 1230, International Conference on Optoelectronic Science and Engineering '90; 12301A (1990) https://doi.org/10.1117/12.2294683
Event: The Marketplace for Industrial Lasers 1990, 1990, Chicago, IL, United States
Abstract
Crystallization velocities and activation energies in the initial crystalli- zation process, obtained from measurements transmissivity(reflectivity), are de- scribed for amorphous In-Sb-Te films 400-600 A thick, which are set up in a chamber with a window guiding of the light through a long-distance focused lens. The crystallization velocity was obtained to about 100 Ajs for Inx(Sb0.4Teo.6)1-. x=0.2--0.3) films. The activation energy was determined by Kissinger's plot to be 1.5--2.0 eV. The frequency factor was calculated by the Johnson-Mehl-Avrami equation; logi 0 v 0=20-30 (Hz). Static repetition cycles of about 3 X 104 were recognized in the film composition of x = 0.2 for the sample structure without upper protection layer.
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Tatsuhiko Matsushita, Tatsuhiko Matsushita, } "Measurements of crystallization velocity and activation energy in the optical recording films with In-Sb-Te system", Proc. SPIE 1230, International Conference on Optoelectronic Science and Engineering '90, 12301A (1 July 1990); doi: 10.1117/12.2294683; https://doi.org/10.1117/12.2294683
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