1 July 1990 Optical gain in GaAs/GaAlAs graded-index separate confinement single quantum well heterostructures
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Proceedings Volume 1230, International Conference on Optoelectronic Science and Engineering '90; 12302X (1990) https://doi.org/10.1117/12.2294742
Event: The Marketplace for Industrial Lasers 1990, 1990, Chicago, IL, United States
Abstract
Results of investigations on the dependence of the gain spectra, their polarization properties, and their peak emission values, on both the quantum well width and injection current are presented for single mode GaAs/AlGaAs graded-index separate confinement heterostructure single quantum well (GRINSCH SQW) lasers. Further, the relationships between the laser parameters critical to lasing with the n = 1 subband transitions are analyzed in terms of the material optical gain of the quantum well.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Glen A. B. Feak, Glen A. B. Feak, } "Optical gain in GaAs/GaAlAs graded-index separate confinement single quantum well heterostructures", Proc. SPIE 1230, International Conference on Optoelectronic Science and Engineering '90, 12302X (1 July 1990); doi: 10.1117/12.2294742; https://doi.org/10.1117/12.2294742
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