1 July 1990 A phased array laser made of GaAs/GaAlAs graded barrier single quantum well structure
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Proceedings Volume 1230, International Conference on Optoelectronic Science and Engineering '90; 12303N (1990) https://doi.org/10.1117/12.2294768
Event: The Marketplace for Industrial Lasers 1990, 1990, Chicago, IL, United States
Abstract
A phased array laser made of MOCVD-grown GaAs / GaAlAs graded barrier separate confinement heterostructure single quantum well (GBSC SQW) wafer was investigated. The threshold current of the array composed of ten ridge waveguide lasers was 67mA, linear output power was more than 500mW, and the external differential quantum efficiency was 60%. The configuration of the array is consisted of strongly coupling central region and weakly coupling mirror regions, and the effect of the geometrical configuration of the strongly coupling region on the coupled array supermode was examined.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Longde Zhu, Longde Zhu, } "A phased array laser made of GaAs/GaAlAs graded barrier single quantum well structure", Proc. SPIE 1230, International Conference on Optoelectronic Science and Engineering '90, 12303N (1 July 1990); doi: 10.1117/12.2294768; https://doi.org/10.1117/12.2294768
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