1 July 1990 Laser devices made of magnesium doped lithium niobate
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Proceedings Volume 1230, International Conference on Optoelectronic Science and Engineering '90; 12303T (1990) https://doi.org/10.1117/12.2294774
Event: The Marketplace for Industrial Lasers 1990, 1990, Chicago, IL, United States
Abstract
High quality magnesium doped lithium niobate (Mg: LiNbO3, Mg:LN) crystal with magmesium content being 6. 5mol% has been grown in our lab. The crystal's homogenity and antiphotorefractivity were investigated by polarization microscopy and beam-distortion method respectively. Experimentall results showed that this kind of doped crystal has not only high optical homogenity (10 -10 crp i ) but strong resistance to photo-induced index damage (photo -refraction)(up to 100mW / cm ), which means that the two obstacles of LN crystal to be used in laser technique were removed by doping MgO into LN host. So it is necessary to make laser devices of Mg:LN crystal which can be grown from melt easily. In our lab several laser devices, such as frequency doubler, Q-switch, parameter oscillator, were made of the crystal. The main results of laser doublers and Q-switches are reported in this paper.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chong-quan Xu, Chong-quan Xu, } "Laser devices made of magnesium doped lithium niobate", Proc. SPIE 1230, International Conference on Optoelectronic Science and Engineering '90, 12303T (1 July 1990); doi: 10.1117/12.2294774; https://doi.org/10.1117/12.2294774
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