1 July 1990 Optical bistability in silicon on sapphire thermo-optical seed element
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Proceedings Volume 1230, International Conference on Optoelectronic Science and Engineering '90; 12306U (1990) https://doi.org/10.1117/12.2294883
Event: The Marketplace for Industrial Lasers 1990, 1990, Chicago, IL, United States
Abstract
We present optical bistability in silicon on sapphire (SOS) thermooptical SEED structures at a visible wavelength of A = 514nm. Theoretical analysis and experimental results show that bistability is due to increasing absorption and thermally induced change of the internal resistance.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hongchen Zhai, Hongchen Zhai, } "Optical bistability in silicon on sapphire thermo-optical seed element", Proc. SPIE 1230, International Conference on Optoelectronic Science and Engineering '90, 12306U (1 July 1990); doi: 10.1117/12.2294883; https://doi.org/10.1117/12.2294883
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