Paper
9 November 1977 A Review Of HgCdTe Infrared Detector Technology
M. B. Reine, R. M. Broudy
Author Affiliations +
Abstract
Mercury-cadmium telluride (HgCdTe or Hg1-xCdxTe) has emerged over the past fifteen years as the most widely applicable infrared quantum detecor material available today. Highly sensitive photoconductors, photodiodes and MIS (metal-insulator-semiconductor) detectors, achieving in many cases background-limited performance, are now being used in or being developed for a wide range of DoD and NASA sensor applications over the 2-30 micrometer spectral range. This paper is a brief review of the basic principles of operation, the performance characteristics, and the state-of-the-art of HgCdTe infrared detectors. Emphasis is placed on HgCdTe photoconduc-tors and photodiodes. The paper is intended to provide basic information to those who are or who will be incorporating HgCdTe detectors into modern infrared sensors and systems.
© (1977) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. B. Reine and R. M. Broudy "A Review Of HgCdTe Infrared Detector Technology", Proc. SPIE 0124, Modern Utilization of Infrared Technology III, (9 November 1977); https://doi.org/10.1117/12.955846
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CITATIONS
Cited by 4 scholarly publications.
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KEYWORDS
Sensors

Mercury cadmium telluride

Photodiodes

Infrared detectors

Infrared sensors

Photoresistors

Quantum efficiency

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