Juha Heinonen,1 Antti Haarahiltunen,1 Ville Vähänissi,2 Toni P. Pasanenhttps://orcid.org/0000-0003-1218-7303,2 Hele Savin,2 Juha Toivanen,1 Mikko A. Juntunen1
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Black silicon induced junction photodiodes have nearly ideal responsivity across a wide range of wavelengths between 175-1100 nm, with external quantum efficiency over 99 % at visible wavelengths, when a single spot is measured using light beam between 1 to 2mm in diameter. The spatial uniformity of responsivity is also an important characteristic of a high-quality photodiode, when considering its usage as a reference in photometry. We study here the spatial uniformity of responsivity of large area (8mmx8mm) black silicon photodiodes at 405 nm wavelength. Our results show that the spatial non-uniformity is less than 0.5 % over 90 % of the surface area, and thus the photodiodes meet the thigh criteria typically set for reference standards and are hence suitable for such application.
Juha Heinonen,Antti Haarahiltunen,Ville Vähänissi,Toni P. Pasanen,Hele Savin,Juha Toivanen, andMikko A. Juntunen
"Spatial uniformity of black silicon induced junction photodiode responsivity", Proc. SPIE 12417, Optical Components and Materials XX, 1241713 (14 March 2023); https://doi.org/10.1117/12.2649636
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Juha Heinonen, Antti Haarahiltunen, Ville Vähänissi, Toni P. Pasanen, Hele Savin, Juha Toivanen, Mikko A. Juntunen, "Spatial uniformity of black silicon induced junction photodiode responsivity," Proc. SPIE 12417, Optical Components and Materials XX, 1241713 (14 March 2023); https://doi.org/10.1117/12.2649636