1 July 1990 Characterization of soft x-ray damage in charge-coupled devices
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Abstract
The paper presents the use of deep level transient spectroscopy to characterize trapping centers in CCD imagers. A discussion is presented regarding the effects of UV illumination and elevated temperature annealing in a hydrogen-rich environment. Two trapping centers are described, and the annealing experiments suggest techniques for extending CCD lifetimes.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nigel M. Allinson, Nigel M. Allinson, D. W.E. Allsopp, D. W.E. Allsopp, B. G. Magorrian, B. G. Magorrian, J. Alan Quayle, J. Alan Quayle, } "Characterization of soft x-ray damage in charge-coupled devices", Proc. SPIE 1242, Charge-Coupled Devices and Solid State Optical Sensors, (1 July 1990); doi: 10.1117/12.19439; https://doi.org/10.1117/12.19439
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